Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247
- RS-artikelnummer:
- 222-4841
- Tillv. art.nr:
- IDWD20G120C5XKSA1
- Tillverkare / varumärke:
- Infineon
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1 868,16 kr
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2 335,20 kr
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 30 | 62,272 kr | 1 868,16 kr |
| 60 - 120 | 59,158 kr | 1 774,74 kr |
| 150 + | 55,422 kr | 1 662,66 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4841
- Tillv. art.nr:
- IDWD20G120C5XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | SiC Diode | |
| Mount Type | Surface | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiCTM 1200V | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 166μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 190A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.8 mm | |
| Length | 40.21mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type SiC Diode | ||
Mount Type Surface | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiCTM 1200V | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 166μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 190A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.65V | ||
Maximum Operating Temperature 175°C | ||
Width 15.8 mm | ||
Length 40.21mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 20 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.
No reverse recovery current, no forward recovery voltage
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
High surge current capability
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