onsemi 1200 V 46 A Schottky Diode Schottky 2-Pin TO-247 FFSH30120A
- RS-artikelnummer:
- 178-4616
- Tillv. art.nr:
- FFSH30120A
- Tillverkare / varumärke:
- onsemi
Antal (1 enhet)*
79,66 kr
(exkl. moms)
99,58 kr
(inkl. moms)
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- Slutlig(a) 569 enhet(er), redo att levereras
Enheter | Per enhet |
|---|---|
| 1 + | 79,66 kr |
*vägledande pris
- RS-artikelnummer:
- 178-4616
- Tillv. art.nr:
- FFSH30120A
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 46A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | EliteSiC | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 150A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.82mm | |
| Diameter | 6.85 mm | |
| Width | 4.82 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 46A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series EliteSiC | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 150A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 200μA | ||
Maximum Operating Temperature 175°C | ||
Height 20.82mm | ||
Diameter 6.85 mm | ||
Width 4.82 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Length 15.87mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
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