onsemi 1200 V 17 A Diode Schottky 2-Pin TO-247
- RS-artikelnummer:
- 178-4264
- Tillv. art.nr:
- FFSH10120A-F085
- Tillverkare / varumärke:
- onsemi
Antal (1 rör med 30 enheter)*
1 636,32 kr
(exkl. moms)
2 045,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 31 mars 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 + | 54,544 kr | 1 636,32 kr |
*vägledande pris
- RS-artikelnummer:
- 178-4264
- Tillv. art.nr:
- FFSH10120A-F085
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 17A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 850A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Diameter | 6.85 mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Height | 20.82mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 17A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 400μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 850A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Diameter 6.85 mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Height 20.82mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
No Reverse Recovery / No Forward Recovery
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
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