onsemi 1200 V 26 A Diode Schottky 2-Pin TO-247 FFSH15120A
- RS-artikelnummer:
- 178-4446
- Tillv. art.nr:
- FFSH15120A
- Tillverkare / varumärke:
- onsemi
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66,98 kr
(exkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 66,98 kr |
| 10 + | 57,79 kr |
*vägledande pris
- RS-artikelnummer:
- 178-4446
- Tillv. art.nr:
- FFSH15120A
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 26A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 920A | |
| Peak Reverse Current Ir | 400μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82 mm | |
| Diameter | 6.85 mm | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 26A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 920A | ||
Peak Reverse Current Ir 400μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.82 mm | ||
Diameter 6.85 mm | ||
Height 20.82mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
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