Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin TO-252 IRFR4510TRPBF
- RS-artikelnummer:
- 915-5011
- Tillv. art.nr:
- IRFR4510TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
146,74 kr
(exkl. moms)
183,42 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 40 enhet(er) från den 29 december 2025
- Sista 7 080 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 14,674 kr | 146,74 kr |
| 50 - 90 | 11,738 kr | 117,38 kr |
| 100 - 240 | 10,875 kr | 108,75 kr |
| 250 - 490 | 10,125 kr | 101,25 kr |
| 500 + | 9,397 kr | 93,97 kr |
*vägledande pris
- RS-artikelnummer:
- 915-5011
- Tillv. art.nr:
- IRFR4510TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 143W | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 7.49 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-463 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 143W | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 7.49 mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-463 | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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