Infineon HEXFET Type P-Channel MOSFET, 15 A, 30 V Enhancement, 8-Pin SOIC IRF9321TRPBF
- RS-artikelnummer:
- 915-4982
- Tillv. art.nr:
- IRF9321TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
121,82 kr
(exkl. moms)
152,28 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 6 120 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 6,091 kr | 121,82 kr |
| 100 - 480 | 3,929 kr | 78,58 kr |
| 500 - 980 | 3,539 kr | 70,78 kr |
| 1000 - 2480 | 3,137 kr | 62,74 kr |
| 2500 + | 2,893 kr | 57,86 kr |
*vägledande pris
- RS-artikelnummer:
- 915-4982
- Tillv. art.nr:
- IRF9321TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Length | 5mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4 mm | ||
Length 5mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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