Infineon HEXFET Type P-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF9310TRPBF
- RS-artikelnummer:
- 827-3912
- Tillv. art.nr:
- IRF9310TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
113,51 kr
(exkl. moms)
141,89 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 3 550 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 11,351 kr | 113,51 kr |
| 100 - 240 | 10,779 kr | 107,79 kr |
| 250 - 490 | 10,331 kr | 103,31 kr |
| 500 - 990 | 9,641 kr | 96,41 kr |
| 1000 + | 9,085 kr | 90,85 kr |
*vägledande pris
- RS-artikelnummer:
- 827-3912
- Tillv. art.nr:
- IRF9310TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-454 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-454 | ||
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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