Infineon HEXFET Type P-Channel MOSFET, 15 A, 30 V Enhancement, 8-Pin SOIC

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11 296,00 kr

(exkl. moms)

14 120,00 kr

(inkl. moms)

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4000 +2,824 kr11 296,00 kr

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RS-artikelnummer:
145-9567
Tillv. art.nr:
IRF9321TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4 mm

Length

5mm

Height

1.5mm

Automotive Standard

No

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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