Infineon HEXFET Type P-Channel MOSFET, 16 A, 30 V Enhancement, 8-Pin SOIC

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13 676,00 kr

(exkl. moms)

17 096,00 kr

(inkl. moms)

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4000 +3,419 kr13 676,00 kr

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RS-artikelnummer:
168-7937
Tillv. art.nr:
IRF9317TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

61nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Height

1.5mm

Length

5mm

Width

4 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
TH

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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