Infineon Typ N Kanal, MOSFET, 64 A 250 V Förbättring, 3 Ben, TO-263, OptiMOS 3
- RS-artikelnummer:
- 165-8068
- Tillv. art.nr:
- IPB200N25N3GATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 1000 enheter)*
42 089,00 kr
(exkl. moms)
52 611,00 kr
(inkl. moms)
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- Dessutom levereras 2 000 enhet(er) från den 27 april 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 42,089 kr | 42 089,00 kr |
*vägledande pris
- RS-artikelnummer:
- 165-8068
- Tillv. art.nr:
- IPB200N25N3GATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Varumärke | Infineon | |
| Produkttyp | MOSFET | |
| Kanaltyp | Typ N | |
| Maximal kontinuerlig dräneringsström Id | 64A | |
| Maximal källspänning för dränering Vds | 250V | |
| Serie | OptiMOS 3 | |
| Kapseltyp | TO-263 | |
| Typ av fäste | Yta | |
| Antal ben | 3 | |
| Maximal drain-källresistans Rds | 20mΩ | |
| Kanalläge | Förbättring | |
| Minsta arbetsstemperatur | -55°C | |
| Maximal effektförlust Pd | 300W | |
| Framåtriktad spänning Vf | 1V | |
| Typisk grindladdning Qg @ Vgs | 64nC | |
| Maximal arbetstemperatur | 175°C | |
| Standarder/godkännanden | No | |
| Höjd | 4.57mm | |
| Längd | 10.31mm | |
| Fordonsstandard | Nej | |
| Välj alla | ||
|---|---|---|
Varumärke Infineon | ||
Produkttyp MOSFET | ||
Kanaltyp Typ N | ||
Maximal kontinuerlig dräneringsström Id 64A | ||
Maximal källspänning för dränering Vds 250V | ||
Serie OptiMOS 3 | ||
Kapseltyp TO-263 | ||
Typ av fäste Yta | ||
Antal ben 3 | ||
Maximal drain-källresistans Rds 20mΩ | ||
Kanalläge Förbättring | ||
Minsta arbetsstemperatur -55°C | ||
Maximal effektförlust Pd 300W | ||
Framåtriktad spänning Vf 1V | ||
Typisk grindladdning Qg @ Vgs 64nC | ||
Maximal arbetstemperatur 175°C | ||
Standarder/godkännanden No | ||
Höjd 4.57mm | ||
Längd 10.31mm | ||
Fordonsstandard Nej | ||
RoHS-status: Inte relevant
- COO (ursprungsland):
- CN
Infineon OptiMOS™ 3 Series MOSFET, 64A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPB200N25N3GATMA1
This N-channel MOSFET is designed for efficient power management in various electronic applications, featuring a maximum continuous drain current of 64A and a voltage rating of 250V. Its robust thermal performance and low on-resistance contribute to effective electrical performance across a wide temperature range, making it suitable for high-frequency switching and synchronous rectification.
Features & Benefits
• Optimal gate charge x RDS(on) product enhances efficiency
• Low on-resistance minimises power loss during operation
• Operational temperature up to +175°C accommodates diverse applications
• Complies with RoHS and halogen-free standards for eco-friendly use
• Compact D2PAK design and surface mount facilitate integration
• Qualified according to JEDEC for reliability in target applications
Applications
• Used in power supplies for automation systems
• Appropriate for high-efficiency converters in renewable energy
• Employed in motor control for industrial machinery
• Ideal for synchronous rectification in desktop power supplies
• Applied in electric vehicles for effective energy management
What measures should be taken to ensure optimal performance during installation?
It is important to maintain an effective thermal management system to dissipate heat, ensuring the device operates within its specified temperature limits.
Can this component be used in applications requiring rapid switching?
Yes, it is suitable for high-frequency applications such as DC-DC converters and drivers due to its fast switching capabilities.
Is there a specific circuit design recommended for optimal use?
A proper gate driver circuit can enhance performance, particularly in terms of turn-on and turn-off times, which helps reduce switching losses.
What should be considered regarding environmental conditions during operation?
Ensure it is placed in an environment where temperatures remain within its operational limits of -55°C to +175°C to prevent thermal degradation.
How does this MOSFET perform under heavy load conditions?
It efficiently handles a continuous drain current of 64A while maintaining low on-resistance, thus reducing overheating and improving reliability under load.
Relaterade länkar
- Infineon Typ N Kanal 64 A 250 V Förbättring TO-263, OptiMOS 3
- Infineon Typ N Kanal 80 A 80 V Förbättring TO-263, OptiMOS 3
- Infineon Typ N Kanal 25 A 250 V Förbättring TO-263, OptiMOS 3
- Infineon Typ N Kanal 50 A 60 V Förbättring TO-263, OptiMOS 3
- Infineon Typ N Kanal 50 A 150 V Förbättring TO-263, OptiMOS 3
- Infineon Typ N Kanal 120 A 100 V Förbättring TO-263, OptiMOS 3
- Infineon Typ N Kanal 120 A 75 V Förbättring TO-263, OptiMOS 3
- Infineon Typ N Kanal 34 A 200 V Förbättring TO-263, OptiMOS 3
