Infineon OptiMOS Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 3-Pin SOT-223
- RS-artikelnummer:
- 911-4820
- Tillv. art.nr:
- BSP603S2LHUMA1
- Tillverkare / varumärke:
- Infineon
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- RS-artikelnummer:
- 911-4820
- Tillv. art.nr:
- BSP603S2LHUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Standards/Approvals | RoHS | |
| Width | 3.5 mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Standards/Approvals RoHS | ||
Width 3.5 mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q | ||
Infineon OptiMOS™ Series MOSFET, 5.2A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP603S2LHUMA1
This N-channel MOSFET is engineered for efficient performance across various electrical applications. With a maximum continuous drain current of 5.2A and a maximum drain-source voltage of 55V, it provides robust capabilities for power management and control, making it an important component for professionals in automotive and electronics industries.
Features & Benefits
• Low RDS(on) minimises power loss during operation
• Maximum gate threshold voltage improves switching efficiency
• Surface mount design facilitates integration into compact PCBs
• AEC-qualified to meet stringent automotive standards
• High-temperature operation rated up to +150°C for durability
Applications
• Power management in automotive electronics
• Suitable for DC-DC converters in electric vehicles
• Utilised in motor control for robotics and automation
• Load switch in consumer electronics
What is the typical gate charge at 10V?
The typical gate charge is 31nC, optimising switching performance at 10V.
Is this suitable for applications in high-temperature environments?
Yes, it operates reliably at temperatures up to +150°C, ideal for challenging conditions.
How does this component handle significant current loads?
With a maximum continuous drain current of 5.2A, it effectively manages high loads while maintaining performance.
Can this MOSFET effectively reduce energy losses?
Yes, the low RDS(on) feature minimises on-state resistance, aiding in reducing energy losses during operation.
Does this product adhere to environmental standards?
Yes, it is RoHS compliant, ensuring it meets environmental safety standards for electronic components.
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