Infineon OptiMOS Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 3-Pin SOT-223 BSP603S2LHUMA1

RS-artikelnummer:: 462-2935
Tillv. art.nr:: BSP603S2LHUMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 3-Pin SOT-223 BSP603S2LHUMA1

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

164,96 kr

(exkl. moms)

206,20 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 20 enhet(er), redo att levereras från en annan plats

Enheter	Per enhet	Per förpackning*
10 - 40	16,496 kr	164,96 kr
50 - 90	15,669 kr	156,69 kr
100 - 240	14,112 kr	141,12 kr
250 - 490	12,701 kr	127,01 kr
500 +	12,074 kr	120,74 kr

*vägledande pris

RS-artikelnummer:: 462-2935
Tillv. art.nr:: BSP603S2LHUMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	55V
	Series	OptiMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Width	3.5 mm
	Length	6.5mm
	Height	1.6mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 55V
	Series OptiMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Width 3.5 mm
	Length 6.5mm
	Height 1.6mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q

Infineon OptiMOS™ Series MOSFET, 5.2A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP603S2LHUMA1

This N-channel MOSFET is engineered for efficient performance across various electrical applications. With a maximum continuous drain current of 5.2A and a maximum drain-source voltage of 55V, it provides robust capabilities for power management and control, making it an important component for professionals in automotive and electronics industries.

Features & Benefits

• Low RDS(on) minimises power loss during operation

• Maximum gate threshold voltage improves switching efficiency

• Surface mount design facilitates integration into compact PCBs

• AEC-qualified to meet stringent automotive standards

• High-temperature operation rated up to +150°C for durability

Applications

• Power management in automotive electronics

• Suitable for DC-DC converters in electric vehicles

• Utilised in motor control for robotics and automation

• Load switch in consumer electronics

What is the typical gate charge at 10V?

The typical gate charge is 31nC, optimising switching performance at 10V.

Is this suitable for applications in high-temperature environments?

Yes, it operates reliably at temperatures up to +150°C, ideal for challenging conditions.

How does this component handle significant current loads?

With a maximum continuous drain current of 5.2A, it effectively manages high loads while maintaining performance.

Can this MOSFET effectively reduce energy losses?

Yes, the low RDS(on) feature minimises on-state resistance, aiding in reducing energy losses during operation.

Does this product adhere to environmental standards?

Yes, it is RoHS compliant, ensuring it meets environmental safety standards for electronic components.