Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1
- RS-artikelnummer:
- 110-7754
- Tillv. art.nr:
- BSP372NH6327XTSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
119,40 kr
(exkl. moms)
149,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 950 enhet(er) levereras från den 26 mars 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 50 | 2,388 kr | 119,40 kr |
| 100 - 200 | 1,935 kr | 96,75 kr |
| 250 - 450 | 1,814 kr | 90,70 kr |
| 500 - 1200 | 1,696 kr | 84,80 kr |
| 1250 + | 1,552 kr | 77,60 kr |
*vägledande pris
- RS-artikelnummer:
- 110-7754
- Tillv. art.nr:
- BSP372NH6327XTSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Width | 3.5 mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 304-36-977 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Width 3.5 mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 304-36-977 | ||
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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