N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 Infineon BSP372NH6327XTSA1

RS-artikelnummer:: 110-7754
Tillv. art.nr:: BSP372NH6327XTSA1
Tillverkare / varumärke:: Infineon

N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 Infineon BSP372NH6327XTSA1

1000 I lager för avsändande samma dag

Pris (ex. moms) Var (i ett paket med 50)

7,861 kr

(exkl. moms)

9,826 kr

(inkl. moms)

Enheter	Per enhet	Per förpackning*
50 - 50	7,861 kr	393,05 kr
100 - 200	6,368 kr	318,40 kr
250 - 450	5,974 kr	298,70 kr
500 - 1200	5,583 kr	279,15 kr
1250 +	5,111 kr	255,55 kr

RS-artikelnummer:: 110-7754
Tillv. art.nr:: BSP372NH6327XTSA1
Tillverkare / varumärke:: Infineon

BSP372N OptiMOS N-ch MOSFET Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.8 A
Maximum Drain Source Voltage	100 V
Package Type	SOT-223
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	270 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.8V
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.5mm
Typical Gate Charge @ Vgs	9.5 nC @ 10 V
Length	6.5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.1V
Height	1.6mm

N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 Infineon BSP372NH6327XTSA1

Infineon OptiMOS™ Small Signal MOSFETs