Toshiba TK Type N-Channel MOSFET, 62 A, 600 V Enhancement, 3-Pin TO-247 TK62N60W,S1VF(S
- RS-artikelnummer:
- 896-2417
- Tillv. art.nr:
- TK62N60W,S1VF(S
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 enhet)*
77,50 kr
(exkl. moms)
96,88 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 7 enhet(er) från den 29 december 2025
- Dessutom levereras 1 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 77,50 kr |
| 10 - 49 | 63,55 kr |
| 50 - 99 | 58,13 kr |
| 100 - 199 | 54,41 kr |
| 200 + | 50,45 kr |
*vägledande pris
- RS-artikelnummer:
- 896-2417
- Tillv. art.nr:
- TK62N60W,S1VF(S
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | TK | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 400W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.95mm | |
| Length | 15.94mm | |
| Width | 5.02 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series TK | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 400W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 20.95mm | ||
Length 15.94mm | ||
Width 5.02 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
relaterade länkar
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220