Infineon N-Channel MOSFET Tetrode, 25 mA, 8 V, 6-Pin SOT-363 BG3130RH6327XTSA1

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RS-artikelnummer:
857-8475
Tillv. art.nr:
BG3130RH6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 mA

Maximum Drain Source Voltage

8 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

+6 V

Width

1.25mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Length

2mm

Minimum Operating Temperature

-55 °C

Height

0.8mm

Typical Power Gain

31 dB

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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