onsemi PowerTrench N-Channel MOSFET, 950 mA, 25 V, 6-Pin SOT-363 (SC-70) FDG313N

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RS-artikelnummer:
146-2123
Tillv. art.nr:
FDG313N
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

950 mA

Maximum Drain Source Voltage

25 V

Series

PowerTrench

Package Type

SOT-363 (SC-70)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

760 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

1.64 nC @ 4.5 V

Transistor Material

Si

Width

1.25mm

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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