onsemi Dual N/P-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 FDG6332C

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RS-artikelnummer:
166-1651
Tillv. art.nr:
FDG6332C
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

600 mA, 700 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

442 mΩ, 700 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V

Length

2mm

Width

1.25mm

Number of Elements per Chip

2

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Automotive Dual N-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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