onsemi Isolated 2 Type N-Channel MOSFET, 500 mA, 25 V Enhancement, 6-Pin SOT-363

Se alla MOSFETs
För närvarande inte tillgänglig
Vi vet inte om den här artikeln kommer tillbaka i lager, RS har för avsikt att ta bort den från vårt utbud snart.
RS-artikelnummer:
178-7601
Tillv. art.nr:
FDG6303N
Tillverkare / varumärke:
onsemi
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

500mA

Maximum Drain Source Voltage Vds

25V

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

770mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

300mW

Typical Gate Charge Qg @ Vgs

1.64nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

2mm

Standards/Approvals

No

Height

1mm

Width

1.25 mm

Number of Elements per Chip

2

Automotive Standard

No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

relaterade länkar