Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P405ATMA1

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RS-artikelnummer:
857-4540
Tillv. art.nr:
IPB80P04P405ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

D2PAK (TO-263)

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

9.25mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

116 nC @ 10 V

Length

10mm

Number of Elements per Chip

1

Height

4.4mm

Minimum Operating Temperature

-55 °C

RoHS-status: Inte relevant

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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