Infineon OptiMOS P P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK IPB180P04P403ATMA1

RS-artikelnummer:: 857-8674
Tillv. art.nr:: IPB180P04P403ATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS P P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK IPB180P04P403ATMA1

Mängdrabatt möjlig

Antal (1 rulle med 1000 enheter)*

17 140,00 kr

(exkl. moms)

21 420,00 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig

Enheter	Per enhet	Per rulle*
1000 - 1000	17,14 kr	17 140,00 kr
2000 - 4000	16,701 kr	16 701,00 kr
5000 +	16,283 kr	16 283,00 kr

*vägledande pris

RS-artikelnummer:: 857-8674
Tillv. art.nr:: IPB180P04P403ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	180 A
	Maximum Drain Source Voltage	40 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS P
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	2.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	150 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	9.25mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	190 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Length	10mm
	Height	4.4mm
	Minimum Operating Temperature	-55 °C

	Välj alla
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 180 A
	Maximum Drain Source Voltage 40 V
	Package Type D2PAK (TO-263)
	Series OptiMOS P
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 2.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 150 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 9.25mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 190 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Length 10mm
	Height 4.4mm
	Minimum Operating Temperature -55 °C

RoHS-status: Inte relevant

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK IPB180P04P403ATMA1

Infineon OptiMOS™P P-Channel Power MOSFETs

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