Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S2L11ATMA1

RS-artikelnummer:: 857-4524
Tillv. art.nr:: IPB80N06S2L11ATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S2L11ATMA1

Mängdrabatt möjlig

Antal (1 rulle med 1000 enheter)*

9 671,00 kr

(exkl. moms)

12 089,00 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig

Enheter	Per enhet	Per rulle*
1000 - 1000	9,671 kr	9 671,00 kr
2000 - 4000	9,323 kr	9 323,00 kr
5000 +	9,202 kr	9 202,00 kr

*vägledande pris

RS-artikelnummer:: 857-4524
Tillv. art.nr:: IPB80N06S2L11ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	55 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	14.7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	158 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	9.25mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	62 nC @ 10 V
	Length	10mm
	Maximum Operating Temperature	+175 °C
	Height	4.4mm
	Minimum Operating Temperature	-55 °C

	Välj alla
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 55 V
	Package Type D2PAK (TO-263)
	Series OptiMOS
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 14.7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 158 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 9.25mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 62 nC @ 10 V
	Length 10mm
	Maximum Operating Temperature +175 °C
	Height 4.4mm
	Minimum Operating Temperature -55 °C

RoHS-status: Undantagen

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S2L11ATMA1

Infineon OptiMOS™ Power MOSFET Family

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