Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80N04S403ATMA1

RS-artikelnummer:: 857-4509
Tillv. art.nr:: IPB80N04S403ATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80N04S403ATMA1

Mängdrabatt möjlig

Antal (1 rulle med 1000 enheter)*

7 875,00 kr

(exkl. moms)

9 844,00 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig

Enheter	Per enhet	Per rulle*
1000 - 1000	7,875 kr	7 875,00 kr
2000 - 4000	7,673 kr	7 673,00 kr
5000 +	7,481 kr	7 481,00 kr

*vägledande pris

RS-artikelnummer:: 857-4509
Tillv. art.nr:: IPB80N04S403ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	40 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS T2
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	3.7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	94 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	51 nC @ 10 V
	Length	10mm
	Number of Elements per Chip	1
	Width	9.25mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	4.4mm

	Välj alla
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 40 V
	Package Type D2PAK (TO-263)
	Series OptiMOS T2
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 3.7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 94 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 51 nC @ 10 V
	Length 10mm
	Number of Elements per Chip 1
	Width 9.25mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 4.4mm

RoHS-status: Undantagen

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80N04S403ATMA1

Infineon OptiMOS™ T2 Power MOSFETs

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