Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1

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430,90 kr

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538,625 kr

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25 - 2517,236 kr430,90 kr
50 - 10016,376 kr409,40 kr
125 - 22515,684 kr392,10 kr
250 - 47514,996 kr374,90 kr
500 +13,96 kr349,00 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
826-9487
Tillv. art.nr:
IPB80P04P407ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

OptiMOS P

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

88W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1V

Typical Gate Charge Qg @ Vgs

68nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10mm

Height

4.4mm

Width

9.25 mm

Automotive Standard

AEC-Q101

RoHS-status: Inte relevant

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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