Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1

RS-artikelnummer:: 826-9109
Tillv. art.nr:: IPD50P04P413ATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 25 enheter)*

273,95 kr

(exkl. moms)

342,45 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 14 725 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
25 - 25	10,958 kr	273,95 kr
50 - 100	8,548 kr	213,70 kr
125 - 225	8,001 kr	200,03 kr
250 - 600	7,441 kr	186,03 kr
625 +	6,904 kr	172,60 kr

*vägledande pris

RS-artikelnummer:: 826-9109
Tillv. art.nr:: IPD50P04P413ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	Power Transistor
	Channel Type	Type P
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS P
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12.6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	58W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	39nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Length	6.5mm
	Height	2.3mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q

	Välj alla
	Brand Infineon
	Product Type Power Transistor
	Channel Type Type P
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS P
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12.6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 58W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 39nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Length 6.5mm
	Height 2.3mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q

RoHS-status: Inte relevant

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1

GRATIS leverans för online beställningar över 500,00 kr

Infineon OptiMOS™P P-Channel Power MOSFETs

MOSFET Transistors, Infineon

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