DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMG6602SVT-7
- RS-artikelnummer:
- 822-2532
- Tillv. art.nr:
- DMG6602SVT-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 100 enheter)*
304,00 kr
(exkl. moms)
380,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 75 600 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 - 500 | 3,04 kr | 304,00 kr |
| 600 - 1400 | 2,961 kr | 296,10 kr |
| 1500 + | 2,888 kr | 288,80 kr |
*vägledande pris
- RS-artikelnummer:
- 822-2532
- Tillv. art.nr:
- DMG6602SVT-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Maximum Power Dissipation Pd | 1.27W | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Width | 1.6 mm | |
| Standards/Approvals | J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | |
| Length | 2.9mm | |
| Height | 0.9mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Maximum Power Dissipation Pd 1.27W | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Width 1.6 mm | ||
Standards/Approvals J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101 | ||
Length 2.9mm | ||
Height 0.9mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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