DiodesZetex Dual DMN3061 1 Type N-Channel MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT

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3 903,00 kr

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4 878,00 kr

(inkl. moms)

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3000 +1,301 kr3 903,00 kr

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RS-artikelnummer:
206-0081
Tillv. art.nr:
DMN3061SVT-7
Tillverkare / varumärke:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.4A

Maximum Drain Source Voltage Vds

30V

Series

DMN3061

Package Type

TSOT

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

200mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Power Dissipation Pd

1.08W

Forward Voltage Vf

0.7V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Length

2.9mm

Height

0.9mm

Width

1.6 mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The DiodesZetex 30V dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 0.88W thermal power dissipation.

Low input capacitance

Fast switching speed

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