Vishay SQ Rugged Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC SQ4850EY-T1_GE3
- RS-artikelnummer:
- 819-3923
- Tillv. art.nr:
- SQ4850EY-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
245,28 kr
(exkl. moms)
306,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 2 380 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 12,264 kr | 245,28 kr |
| 100 - 180 | 11,531 kr | 230,62 kr |
| 200 - 480 | 10,427 kr | 208,54 kr |
| 500 - 980 | 9,811 kr | 196,22 kr |
| 1000 + | 9,207 kr | 184,14 kr |
*vägledande pris
- RS-artikelnummer:
- 819-3923
- Tillv. art.nr:
- SQ4850EY-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ Rugged | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 6.8W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.55mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ Rugged | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 6.8W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.55mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
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