Vishay SQ Rugged Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212
- RS-artikelnummer:
- 170-8306
- Tillv. art.nr:
- SQS462EN-T1_GE3
- Tillverkare / varumärke:
- Vishay
Antal (1 rulle med 3000 enheter)*
8 601,00 kr
(exkl. moms)
10 752,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 3 000 enhet(er) levereras från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 2,867 kr | 8 601,00 kr |
*vägledande pris
- RS-artikelnummer:
- 170-8306
- Tillv. art.nr:
- SQS462EN-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Height | 1.12mm | |
| Width | 3.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Height 1.12mm | ||
Width 3.4 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
relaterade länkar
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS462EN-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SQ4850EY-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC SQ4401EY-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 40 V Enhancement, 5-Pin SO-8
