Vishay SQ Rugged Type P-Channel MOSFET, 17 A, 40 V Enhancement, 8-Pin SOIC SQ4401EY-T1_GE3
- RS-artikelnummer:
- 819-3917
- Tillv. art.nr:
- SQ4401EY-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
265,78 kr
(exkl. moms)
332,22 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- 10 kvar, redo att levereras
- Sista 20 enhet(er) levereras från den 08 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 26,578 kr | 265,78 kr |
| 50 - 90 | 21,258 kr | 212,58 kr |
| 100 - 240 | 18,603 kr | 186,03 kr |
| 250 - 490 | 17,259 kr | 172,59 kr |
| 500 + | 14,336 kr | 143,36 kr |
*vägledande pris
- RS-artikelnummer:
- 819-3917
- Tillv. art.nr:
- SQ4401EY-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQ Rugged | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 7.14W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.55mm | |
| Width | 4 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQ Rugged | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 7.14W | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.55mm | ||
Width 4 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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