IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227

Se alla MOSFETs

Antal (1 enhet)*

561,80 kr

(exkl. moms)

702,25 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 14 september 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
1 +561,80 kr

*vägledande pris

RS-artikelnummer:
804-7583
Distrelec artikelnummer:
302-53-379
Tillv. art.nr:
IXFN80N50Q3
Tillverkare / varumärke:
IXYS
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

780W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

200nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Width

25.07 mm

Distrelec Product Id

30253379

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

relaterade länkar