IXYS Type N-Channel MOSFET, 37 A, 800 V Enhancement, 4-Pin SOT-227

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564,23 kr

(exkl. moms)

705,29 kr

(inkl. moms)

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RS-artikelnummer:
804-7571
Distrelec artikelnummer:
302-53-374
Tillv. art.nr:
IXFN44N80Q3
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

37A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

185nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

780W

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

25.07 mm

Height

9.6mm

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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