IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin TO-247 IXFH18N100Q3
- RS-artikelnummer:
- 801-1382
- Tillv. art.nr:
- IXFH18N100Q3
- Tillverkare / varumärke:
- IXYS
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232,80 kr
(exkl. moms)
291,00 kr
(inkl. moms)
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- Leverans från den 03 augusti 2026
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 232,80 kr |
| 5 - 9 | 200,48 kr |
| 10 - 29 | 191,97 kr |
| 30 - 89 | 177,74 kr |
| 90 + | 168,45 kr |
*vägledande pris
- RS-artikelnummer:
- 801-1382
- Tillv. art.nr:
- IXFH18N100Q3
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 660mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 830W | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.3 mm | |
| Length | 16.26mm | |
| Height | 16.26mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 660mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 830W | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.3 mm | ||
Length 16.26mm | ||
Height 16.26mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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