IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin ISOPLUS247 IXFR24N100Q3

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393,12 kr

(exkl. moms)

491,40 kr

(inkl. moms)

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Förpackningsalternativ:
RS-artikelnummer:
801-1433
Distrelec artikelnummer:
302-53-394
Tillv. art.nr:
IXFR24N100Q3
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

1kV

Package Type

ISOPLUS247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

490mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

140nC

Maximum Power Dissipation Pd

500W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

21.34mm

Standards/Approvals

No

Length

16.13mm

Width

5.21 mm

Automotive Standard

No

Distrelec Product Id

30253394

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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