IXYS Linear Type N-Channel MOSFET, 12 A, 1 kV Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 686-7840
- Distrelec artikelnummer:
- 302-53-422
- Tillv. art.nr:
- IXTH12N100L
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
226,10 kr
(exkl. moms)
282,62 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 enhet(er) från den 29 december 2025
- Dessutom levereras 868 enhet(er) från den 05 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 1 | 226,10 kr |
| 2 - 4 | 186,54 kr |
| 5 - 9 | 180,99 kr |
| 10 - 19 | 175,88 kr |
| 20 + | 167,19 kr |
*vägledande pris
- RS-artikelnummer:
- 686-7840
- Distrelec artikelnummer:
- 302-53-422
- Tillv. art.nr:
- IXTH12N100L
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-247 | |
| Series | Linear | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 155nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.46mm | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253422 | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-247 | ||
Series Linear | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 155nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 21.46mm | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253422 | ||
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
relaterade länkar
- IXYS Linear Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247 IXTH12N100L
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247 IXFH18N100Q3
- IXYS Linear Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS Linear Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXTN22N100L
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin ISOPLUS247
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin ISOPLUS247
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin PLUS247