IXYS Type N-Channel MOSFET, 32 A, 1 kV Enhancement, 3-Pin PLUS247

Se alla MOSFETs

Antal (1 rör med 30 enheter)*

8 387,22 kr

(exkl. moms)

10 484,04 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 02 november 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
30 +279,574 kr8 387,22 kr

*vägledande pris

RS-artikelnummer:
168-4716
Tillv. art.nr:
IXFX32N100Q3
Tillverkare / varumärke:
IXYS
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

1kV

Package Type

PLUS247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

320mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

1.25kW

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

195nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.21 mm

Height

21.34mm

Length

16.13mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

relaterade länkar