Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- RS-artikelnummer:
- 787-9443
- Tillv. art.nr:
- SQ2310ES-T1_BE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
78,51 kr
(exkl. moms)
98,14 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Håller på att utgå
- Dessutom levereras 60 enhet(er) från den 29 december 2025
- Sista 1 860 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 7,851 kr | 78,51 kr |
| 100 - 240 | 7,683 kr | 76,83 kr |
| 250 - 490 | 6,048 kr | 60,48 kr |
| 500 - 990 | 3,842 kr | 38,42 kr |
| 1000 + | 3,45 kr | 34,50 kr |
*vägledande pris
- RS-artikelnummer:
- 787-9443
- Tillv. art.nr:
- SQ2310ES-T1_BE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | TrenchFET Power MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS: 2002/95/EC | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type TrenchFET Power MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Operating Temperature 175°C | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Standards/Approvals IEC 61249-2-21, RoHS: 2002/95/EC | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
relaterade länkar
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