Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- RS-artikelnummer:
- 787-9480
- Tillv. art.nr:
- SQD25N06-22L_GE3
- Tillverkare / varumärke:
- Vishay
Antal (1 förpackning med 5 enheter)*
112,90 kr
(exkl. moms)
141,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 30 enhet(er) från den 29 december 2025
- Sista 1 880 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 + | 22,58 kr | 112,90 kr |
*vägledande pris
- RS-artikelnummer:
- 787-9480
- Tillv. art.nr:
- SQD25N06-22L_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | TrenchFET Power MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.022Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 62W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type TrenchFET Power MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.022Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 62W | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Height 2.38mm | ||
Length 6.73mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
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