Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23

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RS-artikelnummer:
165-6982
Tillv. art.nr:
SQ2310ES-T1_BE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

TrenchFET Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

SQ Rugged

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.5nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

±8 V

Maximum Operating Temperature

175°C

Length

3.04mm

Height

1.02mm

Standards/Approvals

IEC 61249-2-21, RoHS: 2002/95/EC

Width

1.4 mm

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor


Approvals

AEC-Q101

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