Vishay Type P-Channel MOSFET, 35 A, 40 V, 8-Pin PowerPAK 1212-8 SIS443DN-T1-GE3

RS-artikelnummer:: 180-7730
Tillv. art.nr:: SIS443DN-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay Type P-Channel MOSFET, 35 A, 40 V, 8-Pin PowerPAK 1212-8 SIS443DN-T1-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

102,14 kr

(exkl. moms)

127,675 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

3 940 enhet(er) levereras från den 01 januari 2026

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Enheter	Per enhet	Per förpackning*
5 - 45	20,428 kr	102,14 kr
50 - 120	18,39 kr	91,95 kr
125 - 245	14,246 kr	71,23 kr
250 - 495	11,828 kr	59,14 kr
500 +	9,228 kr	46,14 kr

*vägledande pris

RS-artikelnummer:: 180-7730
Tillv. art.nr:: SIS443DN-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PowerPAK 1212-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0117Ω
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	52W
	Typical Gate Charge Qg @ Vgs	41.5nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	3.61mm
	Height	0.79mm
	Width	3.61 mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 40V
	Package Type PowerPAK 1212-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0117Ω
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 52W
	Typical Gate Charge Qg @ Vgs 41.5nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 3.61mm
	Height 0.79mm
	Width 3.61 mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 11.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 35A. It has a minimum and a maximum driving voltage 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• DC/DC converters

• Load switches

• Mobile computing

• Notebook computers

• Power management

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested