Infineon HEXFET Type N-Channel MOSFET, 5.8 A, 25 V Enhancement, 3-Pin SOT-23 IRFML8244TRPBF

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RS-artikelnummer:
737-7219
Tillv. art.nr:
IRFML8244TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.8A

Maximum Drain Source Voltage Vds

25V

Package Type

SOT-23

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

5.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.25W

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

No

Width

1.4 mm

Length

3.04mm

Distrelec Product Id

304-45-306

Automotive Standard

No

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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