Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 20 V Enhancement, 3-Pin SOT-23

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2 865,00 kr

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3 582,00 kr

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RS-artikelnummer:
919-4731
Tillv. art.nr:
IRLML2402TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

540mW

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.6nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.02mm

Length

3.04mm

Standards/Approvals

No

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
MY

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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