Infineon HEXFET Type N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23

Antal (1 rulle med 3000 enheter)*

2 850,00 kr

(exkl. moms)

3 570,00 kr

(inkl. moms)

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  • Dessutom levereras 18 000 enhet(er) från den 29 december 2025
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3000 +0,95 kr2 850,00 kr

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RS-artikelnummer:
913-4076
Tillv. art.nr:
IRLML6244TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.3A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

1.3W

Typical Gate Charge Qg @ Vgs

8.9nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

3.04mm

Width

1.4 mm

Standards/Approvals

No

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
PH

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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