Infineon HEXFET Type P-Channel MOSFET, 760 mA, 30 V Enhancement, 3-Pin SOT-23

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RS-artikelnummer:
919-4744
Tillv. art.nr:
IRLML5103TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

760mA

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.4nC

Maximum Power Dissipation Pd

540mW

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.04mm

Height

1.02mm

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
TH

Infineon HEXFET Series MOSFET, 760mA Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML5103TRPBF


This MOSFET is a versatile electronic component suited for efficient power switching applications. It is designed for use in automation, electronics, and mechanical industries, offering a compact solution for high-performance tasks. Its enhancement channel mode improves operational efficiency, making it a popular choice in applications that require dependable MOSFET functionality.

Features & Benefits


• Compact SOT-23 package appropriate for space-constrained designs

• High continuous drain current of 760 mA for enhanced durability

• Maximum drain-source voltage of 30 V for a range of applications

• Low Rds(on) of 600mΩ minimises power loss and boosts efficiency

• Typical gate charge of 3.4nC lowers switching losses

Applications


• Utilised in power management and conversion solutions

• Suitable for industrial automation setups

• Ideal for switch-mode power supply designs

• Supports battery management systems in electronic devices

• Employed in motor control that require efficient power switching

How does the MOSFET perform in high-temperature environments?


It functions effectively at temperatures up to +150°C, ensuring consistent performance under challenging conditions.

What is the significance of the low Rds(on) value?


A low Rds(on) of 600mΩ reduces energy loss during operation, enhancing overall system efficiency.

Can this MOSFET be used in compact designs?


Yes, the SOT-23 package enables integration into compact applications without compromising performance.

What is the maximum gate-source voltage this device can handle?


It can tolerate a maximum gate-source voltage of ±20V, ensuring safe operation within specified limits.

How should the installation be approached for optimal performance?


Proper handling and layout on the PCB are crucial to ensure adequate thermal management and connectivity for optimal results.

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