Vishay Si4116DY Type N-Channel MOSFET, 12.7 A, 25 V Enhancement, 8-Pin SOIC SI4116DY-T1-GE3
- RS-artikelnummer:
- 710-3317
- Tillv. art.nr:
- SI4116DY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
52,19 kr
(exkl. moms)
65,24 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 2 410 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 10,438 kr | 52,19 kr |
| 50 - 245 | 9,812 kr | 49,06 kr |
| 250 - 495 | 8,87 kr | 44,35 kr |
| 500 - 1245 | 8,356 kr | 41,78 kr |
| 1250 + | 7,84 kr | 39,20 kr |
*vägledande pris
- RS-artikelnummer:
- 710-3317
- Tillv. art.nr:
- SI4116DY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.7A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | Si4116DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.55mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.7A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series Si4116DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.55mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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