Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 688-7165
- Tillv. art.nr:
- IRFZ44ZPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
50,87 kr
(exkl. moms)
63,59 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 25 enhet(er) är redo att levereras
- Dessutom levereras 2 190 enhet(er) från den 02 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 10,174 kr | 50,87 kr |
| 50 - 120 | 9,05 kr | 45,25 kr |
| 125 - 245 | 8,422 kr | 42,11 kr |
| 250 - 495 | 7,952 kr | 39,76 kr |
| 500 + | 7,324 kr | 36,62 kr |
*vägledande pris
- RS-artikelnummer:
- 688-7165
- Tillv. art.nr:
- IRFZ44ZPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 80W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Width | 4.4 mm | |
| Height | 8.77mm | |
| Distrelec Product Id | 304-43-456 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 80W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10mm | ||
Width 4.4 mm | ||
Height 8.77mm | ||
Distrelec Product Id 304-43-456 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRFZ44ZPBF
- Infineon HEXFET N-Channel MOSFET 55 V D²Pak IRLZ44ZSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel Power MOSFET 55 V Enhancement, 3-Pin TO-220AB
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRFB52N15DPBF
- Infineon HEXFET Type N-Channel Power MOSFET 55 V Enhancement, 3-Pin TO-220AB IRLZ44ZPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220