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Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220

RS-artikelnummer:: 688-6923
Tillv. art.nr:: IRFB3607PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

44,99 kr

(exkl. moms)

56,24 kr

(inkl. moms)

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40 enhet(er) är redo att levereras
Dessutom levereras 425 enhet(er) från den 02 januari 2026

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Enheter	Per enhet	Per förpackning*
5 - 45	8,998 kr	44,99 kr
50 - 120	6,026 kr	30,13 kr
125 - 245	5,556 kr	27,78 kr
250 - 495	5,22 kr	26,10 kr
500 +	4,86 kr	24,30 kr

*vägledande pris

RS-artikelnummer:: 688-6923
Tillv. art.nr:: IRFB3607PBF
Tillverkare / varumärke:: Infineon

Specifikationer

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	140W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	56nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.82 mm
	Standards/Approvals	No
	Length	10.66mm
	Height	9.02mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 140W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 56nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.82 mm
	Standards/Approvals No
	Length 10.66mm
	Height 9.02mm
	Automotive Standard No

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