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Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220 IRFB3607PBF

RS-artikelnummer:: 124-9004
Tillv. art.nr:: IRFB3607PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220 IRFB3607PBF

Mängdrabatt möjlig

Antal (1 rör med 50 enheter)*

367,15 kr

(exkl. moms)

458,95 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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400 enhet(er) är redo att levereras

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Enheter	Per enhet	Per Rør*
50 - 50	7,343 kr	367,15 kr
100 - 200	6,169 kr	308,45 kr
250 - 450	5,728 kr	286,40 kr
500 - 1200	5,36 kr	268,00 kr
1250 +	4,919 kr	245,95 kr

*vägledande pris

RS-artikelnummer:: 124-9004
Tillv. art.nr:: IRFB3607PBF
Tillverkare / varumärke:: Infineon

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	56nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	140W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	9.02mm
	Standards/Approvals	No
	Width	4.82 mm
	Length	10.66mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 56nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 140W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 9.02mm
	Standards/Approvals No
	Width 4.82 mm
	Length 10.66mm
	Automotive Standard No

COO (Country of Origin):: MX

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