IXYS Linear Type N-Channel MOSFET, 22 A, 1 kV Enhancement, 4-Pin SOT-227
- RS-artikelnummer:
- 686-7865
- Distrelec artikelnummer:
- 302-53-431
- Tillv. art.nr:
- IXTN22N100L
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
703,70 kr
(exkl. moms)
879,62 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 6 enhet(er) från den 29 december 2025
- Dessutom levereras 3 enhet(er) från den 29 december 2025
- Dessutom levereras 258 enhet(er) från den 05 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 1 | 703,70 kr |
| 2 - 4 | 619,92 kr |
| 5 - 9 | 603,68 kr |
| 10 - 19 | 588,22 kr |
| 20 + | 573,55 kr |
*vägledande pris
- RS-artikelnummer:
- 686-7865
- Distrelec artikelnummer:
- 302-53-431
- Tillv. art.nr:
- IXTN22N100L
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | Linear | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 700W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.6mm | |
| Width | 25.07 mm | |
| Standards/Approvals | No | |
| Length | 38.2mm | |
| Distrelec Product Id | 30253431 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series Linear | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 700W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.6mm | ||
Width 25.07 mm | ||
Standards/Approvals No | ||
Length 38.2mm | ||
Distrelec Product Id 30253431 | ||
Automotive Standard No | ||
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
relaterade länkar
- IXYS Linear Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXTN22N100L
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXFN32N100Q3
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXFN24N100
- IXYS Linear Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227