onsemi NDS7002A Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 NDS7002A
- RS-artikelnummer:
- 671-1093
- Tillv. art.nr:
- NDS7002A
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
15,57 kr
(exkl. moms)
19,46 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 40 enhet(er) från den 29 december 2025
- Dessutom levereras 10 enhet(er) från den 29 december 2025
- Dessutom levereras 52 160 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 1,557 kr | 15,57 kr |
| 100 - 240 | 1,344 kr | 13,44 kr |
| 250 - 490 | 1,165 kr | 11,65 kr |
| 500 - 990 | 1,019 kr | 10,19 kr |
| 1000 + | 0,93 kr | 9,30 kr |
*vägledande pris
- RS-artikelnummer:
- 671-1093
- Tillv. art.nr:
- NDS7002A
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | NDS7002A | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.88V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Height | 0.93mm | |
| Width | 1.3 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series NDS7002A | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.88V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Height 0.93mm | ||
Width 1.3 mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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