onsemi NDS352AP Type P-Channel MOSFET, 900 mA, 30 V Enhancement, 3-Pin SOT-23 NDS352AP

RS-artikelnummer:: 671-1084
Tillv. art.nr:: NDS352AP
Tillverkare / varumärke:: onsemi

onsemi NDS352AP Type P-Channel MOSFET, 900 mA, 30 V Enhancement, 3-Pin SOT-23 NDS352AP

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Antal (1 förpackning med 10 enheter)*

31,54 kr

(exkl. moms)

39,42 kr

(inkl. moms)

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Dessutom levereras 40 enhet(er) från den 29 december 2025
Dessutom levereras 3 560 enhet(er) från den 05 januari 2026

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Enheter	Per enhet	Per förpackning*
10 - 90	3,154 kr	31,54 kr
100 - 240	2,724 kr	27,24 kr
250 - 490	2,357 kr	23,57 kr
500 - 990	2,061 kr	20,61 kr
1000 +	1,882 kr	18,82 kr

*vägledande pris

RS-artikelnummer:: 671-1084
Tillv. art.nr:: NDS352AP
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	900mA
	Maximum Drain Source Voltage Vds	30V
	Series	NDS352AP
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	2nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.4 mm
	Length	2.92mm
	Standards/Approvals	No
	Height	0.94mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 900mA
	Maximum Drain Source Voltage Vds 30V
	Series NDS352AP
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 2nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.4 mm
	Length 2.92mm
	Standards/Approvals No
	Height 0.94mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.